Electrons. Adv. Mater. 23, 2064068 (2011). 45. Singh, T. B. et al. High-Performance Ambipolar Pentacene Organic Field-Effect Transistors on Poly(vinyl alcohol) Organic Gate Dielectric. Adv. Mater. 17, 2315320 (2005). 46. Han, S.-T., Zhou, Y., Xu, Z.-X., Roy, V. A. L. Hung, T. F. Nanoparticle size dependent threshold voltage shifts in organic memory transistors. J. Mater. Chem. 21, 145754580 (2011). 47. Rani, A., Song, J.-M., Lee, M. J. Lee, J.-S. Decreased graphene oxide based versatile organic charge trap memory devices. Appl. Phys. Lett. 101, 233308 (2012). 48. Lee, P. F. Dai, J. Y. Memory effect of an organic based trilayer structure with Au nanocrystals in an insulating polymer matrix. Nanotechnology 21, 295706 (2010). 49. Debucquoy, M., Rockele, M., Genoe, J., Gelinck, G. H. Heremans, P. Charge trapping in organic transistor memories: Around the function of electrons and holes. Org. Electron. ten, 1252258 (2009). 50. Tang, Q., Li, H., Liu, Y. Hu, W. High-Performance Air-Stable n-Type Transistors with an Asymmetrical Device Configuration Determined by Organic Single-Crystalline Submicrometer/Nanometer Ribbons. J. Am. Chem. Soc. 128, 146344639 (2006).MethodsMaterials. PVP (average Mw ,25,000), C60 (99.5 ), pentacene (sublimated grade) and F16CuPc (sublimated grade) have been purchased from Aldrich. PET substrates have been reduce from commercially readily available PET films. All chemical substances and solvents have been used with no further purification inside the experiment. Device fabrication. PET substrate was cleaned in an ultrasonic bath with detergent, acetone, and isopropanol prior to processing. 20 nm Ag film was thermally evaporated because the gate electrode. 40 nm Al2O3 layer was deposited working with a Savannah 100 ALD system at a substrate temperature of 80uC. C60 was dissolved in 1,two,4trichlorobenzene (TCB) (10 mg ml21) and spin-coated at diverse speeds on the Al2O3 layer with subsequent annealing for 10 min at 120uC inside a nitrogen environment. Soon after that, the PVP film was fabricated by spin-coating the prepared answer (5 mg ml21 in isopropanol). The resulted film was annealed at 100uC for 1 hour in a vacuum oven and also the thickness was about 20 nm.Anti-Mouse TNF alpha Antibody 40 nm pentacene or 25 nm F16CuPc have been thermally deposited as the semiconductor layer at a price of 0.1 to 0.two A s21. The substrate temperature was generally kept at area temperature when depositing the p-type and n-type semiconductor films. Gold (Au) electrodes were employed because the supply and drain contacts for each p-channel and n-channel memory transistors. 40 nm Au films were thermally evaporated by way of a shadow mask at a rate of 0.2 A s21, having a channel length to channel width ratio of 50 mm/1000 mm. Characterization. The morphology of the C60 layer was investigated by AFM (Veeco Multi mode).Nesiritide The thicknesses from the deposited films were measured by an ellipsometer.PMID:27102143 The electrical characteristics on the memory transistors have been measured utilizing a Keithley 2612 source meter. All measurements had been performed in atmospheric atmosphere with a relative humidity of 60 as well as a temperature of 25uC. 1. Forrest, S. R. The path to ubiquitous and low-cost organic electronic appliances on plastic. Nature 428, 91118 (2004). 2. Sekitani, T. et al. Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays. Science 326, 1516519 (2009). three. Rogers, J. A., Someya, T. Huang, Y. Components and Mechanics for Stretchable Electronics. Science 327, 1603607 (2010). four. Zhang, L. et al. Large-area, flexible imaging arrays constructed by light-charge or.
